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Why is my memory card corrupt?
Memory cards have a large problem, the memory cells do not work reliably, information can be lost.
Why?
The information is held in a tiny chamber, as small accumulation of electrons.
If the chamber becomes leaky, the electrons escape and the information is missing. What happens exactly?
The tunnel oxide is approx. 8nm thickly (1nm = 1 millionth millimeter), that corresponds only to few atomic thicknesses.
In places with disturbed structure of oxide (impurities) memory electrons flow off inadvertently.
After chip completion they are examined for these incorrect cells.
The bad block management (BBM) takes care of it, that incorrect blocks are marked and no longer used.
Unfortunately previous damaged memory cells also still fail during the current operation,
the BBM can note these addresses too and prevents the further use of the blocks.
In addition with each delete cycle the tunnel oxide is damaged a little bit more, it just wears itself out.
The manufacturers guarantee 100,000 cycles for simple NAND cells. The so-called wear leveling therefor takes care for that,
that all memory cells are occupied on the average with the same number of memory procedures,
which prevents the premature loss of memory cells and prolongs the life of the memory to its maximum.
On each memory chip the first memory block (block 0) is used for the memory chip management, that means,
from this area the BBM/wear leveling is steered and here also the master boot sektor (MBS)
and the file allocation table (FAT) is settled. The destruction of memory cells within this chip area
draws various consequences and can't be intercepted by no logic. The memory chip is then no more recognized by the computer
or it comes to unexplainable error messages. Due to their small dimension, memory cells cannot be repaired.
The only way to save data exists in the possibility to respond the Block 0 with special drivers, so bypassing device critical failures.
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